PART |
Description |
Maker |
K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V CONNECTOR ACCESSORY 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY IR LED 880NM 40 DEG SIDE VIEW
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
W9812G2IH |
1M × 4 BANKS × 32BIT SDRAM
|
Winbond
|
K4M283233H K4M283233H-FG60 K4M283233H-FG75 K4M2832 |
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Samsung semiconductor
|
K4S56323LF K4S56323LF-S K4S56323LF-R1L K4S56323LF- |
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4M513233C-SDF75 K4M513233C-SDG75 K4M513233C-SN7L |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 4M X 32BIT X 4 BANKS MOBILE SDRAM IN 90FBGA
|
SAMSUNG[Samsung semiconductor]
|
MT48LC1M16A1 |
512K x 16 x 2 banks IT SDRAM(512K x 16 x 2同步动态RAM(工业温度))
|
Micron Technology, Inc.
|
K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
50S116T |
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE[Ceramate Technical]
|
50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
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