| PART |
Description |
Maker |
| SCA-4-10 |
Power Splitter/Combiner 4 Way-050з 5 to 1000 MHz 5 MHz - 1000 MHz RF/MICROWAVE COMBINER, 2.5 dB INSERTION LOSS
Power Splitter/Combiner 4 Way-0∑ 50з 5 to 1000 MHz
Power Splitter/Combiner 4 Way-0° 50?/a> 5 to 1000 MHz
|
MINI[Mini-Circuits]
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| ZFL-1000VH |
Amplifier 50惟 Medium Power 10 to 1000 MHz
Amplifier 50Ω Medium Power 10 to 1000 MHz
|
Mini-Circuits
|
| 0910-60M |
60 Watts - 40 Volts, 150us, 5% Radar 890 - 1000 MHz
P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| ZAPD-2 |
Power Splitter/Combiner 2 Way-0 50Ω 1000 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50ヘ 1000 to 2000 MHz
|
Mini-Circuits
|
| HER507 HER504 HER505 HER508 HER502 HER503 HER501 H |
5.0 Amp High Efficient Rectiffiers 50 to 1000 Volts 5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
| APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| U2797B-AFSG3 U2797B U2797B-AFS |
1000-MHz Quadrature Modulator 1000 - MHz的正交调制器
|
Atmel, Corp.
TEMIC[TEMIC Semiconductors]
|
| STD2NK100Z STU2NK100Z STP2NK100Z |
N-channel 1000 V, 6.25 Ohm, 1.85 A, DPAK Zener-protected SuperMESH(TM) Power MOSFET
N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
|
