PART |
Description |
Maker |
APT6030 APT6030BVFR |
POWER MOS V 600V 21A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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U08A40 U08A60 U08A30 U08A50 |
FAST RECTIFIERS(8A/300-600V) FAST RECTIFIERS(8A,300-600V)
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MOSPEC[Mospec Semiconductor]
|
H08A60 H08A30 H08A40 H08A50 |
HIGH EFFICIENCY RECTIFIERS(8A/300-600V) HIGH EFFICIENCY RECTIFIERS(8A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
U15A60 U15A50 U15A30 U15A40 |
FAST RECTIFIERS(15A/300-600V) FAST RECTIFIERS(15A,300-600V)
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MOSPEC[Mospec Semiconductor]
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IRFIBC40G IRFIBC40 IRFIBC40GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=3.5A)
|
IRF[International Rectifier]
|
IRFPC40 IRFPC40PBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.8A)
|
IRF[International Rectifier]
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MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
PRHMB300A61 PRHMB300A6 |
IGBT MODULE Chopper 300A 600V 300 A, 600 V, N-CHANNEL IGBT
|
Nihon Inter Electronics, Corp. Nihon Inter Electronics Corporation
|
IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
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