| PART |
Description |
Maker |
| MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation
CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
|
| MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11 |
32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63
32M (2M x 16) BIT Page Dual Operation 32M的（2米16）位页双操作
NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63
Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
|
Fujitsu Component Limited.
Fujitsu, Ltd.
FUJITSU LTD
|
| W25Q32BV W25Q32BVSSAG W25Q32BVDAAP W25Q32BVZPAP W2 |
3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
32M X 1 SPI BUS SERIAL EEPROM, PDSO16
|
WINBOND ELECTRONICS CORP
|
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
http://
|
| MBM29PDS322BE10PBT MBM29PDS322TE11 MBM29PDS322TE11 |
FLASH MEMORY 32M (2M x 16) BIT Page Dual Operation
|
Fujitsu Microelectronics
|
| W25Q32DW W25Q32DWSFIG W25Q32DWSFIP W25Q32DWSSIG W2 |
1.8V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
|
Winbond
|
| A29DL323 A29DL323TG-90 A29DL323TV-90 A29DL323UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
AMICC[AMIC Technology]
|
| HYS64V16300GU HYS72V16300GU HYS64V32220GU HYS72V32 |
3.3 V 16M × 64-Bit 1 Bank SDRAM Module(3.3 V 16M × 64-1同步动态RAM模块)
3.3 V 16M × 72-Bit 1 Bank SDRAM Module(3.3 V 16M × 72-1同步动态RAM模块)
3.3 V 32M × 64-Bit 1 Bank SDRAM Module(3.3 V 32M × 64-1同步动态RAM模块)
3.3 V 32M × 72-Bit 1 Bank SDRAM Module(3.3 V 32M × 72-1同步动态RAM模块)
32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
|
| HYS64V16300GU-7-C2 HYS64V16300GU-7.5-C2 HYS64V3222 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模3.332M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
Infineon Technologies AG
Infineon Technologies A...
|
| MC-4532CD646XF-A10 MC-4532CD646XF-A80 MC-4532CD646 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
