| PART |
Description |
Maker |
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTFA043002E |
Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 鈥?860 MHz
|
Infineon Technologies AG
|
| CA922 CA922A |
17 dB 40-860 MHz VHF/UHF CATV/MATV AMPLIFIERS
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| PTB20134 |
30 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
ERICSSON[Ericsson]
|
| PTB20004 |
50 Watts, 860-900 MHz Cellular Radio RF Power Transistor
50 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| MRF373ASR1 MRF373AR1 MRF373A |
MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
MOTOROLA [Motorola, Inc]
|
| MRF374A |
MRF374A 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
Motorola Inc
|
| 0910-60M |
60 Watts - 40 Volts, 150us, 5% Radar 890 - 1000 MHz
P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| PTB20162 |
40 Watts, 470-900 MHz RF Power Transistor
|
ERICSSON[Ericsson]
|
| MHW2723 |
UHF POWER AMPLIFIER 5.0W, 380 TO 470 MHZ
|
Motorola, Inc
|
