| PART |
Description |
Maker |
| ZVA-213 |
Wideband Amplifier 50楼? 800 MHz to 21 GHz
Wideband Amplifier 50惟 800 MHz to 21 GHz
Wideband Amplifier 50Ω 800 MHz to 21 GHz
|
Mini-Circuits
|
| PE6815 PE6815-16 |
2 Watts Low Power Precision WR-90 Waveguide Load 8.2 GHz to 12.4 GHz
|
Pasternack Enterprises,...
|
| PE6820 |
50 Watts Medium Power WR-42 Waveguide Load 18 GHz to 26.5 GHz
|
Pasternack Enterprises,...
|
| PE6806 PE6806-16 |
2 Watts Low Power WR-90 Waveguide Load 8.2 GHz to 12.4 GHz
|
Pasternack Enterprises,...
|
| BFG520W BFG520W_X BFG520W/X |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PTF10021 |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| PTF10031 |
50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 50瓦，1.0 GHzGOLDMOS场效应晶体管
|
Ericsson Microelectronics
|
| PTB20080 |
25 Watts, 1.6-1.7GHz RF Power Transistor
25 Watts, 1.6-1.7 GHz RF Power Transistor
25 Watts 1.6-1.7 GHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PH1214-40M |
Radar Pulsed Power Transistor - 40 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Radar Pulsed Power Transistor - 40 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 401.20 - 1 .40千兆赫，150毫秒脉冲0％的
|
Ecliptek, Corp.
MACOM[Tyco Electronics]
|
| 35FFL-35F50 |
Ultra-wideband, DC to 33 GHz
|
Mini-Circuits
|
| BFG403W-15 |
NPN 17 GHz wideband transistor
|
NXP Semiconductors
|
| BFG93A-15 BFG93A-2015 |
NPN 6 GHz wideband transistors
|
Quanzhou Jinmei Electro...
|
