| PART |
Description |
Maker |
| PS2500 |
Low-Power Direct Digital Modulation Frequency Synthesizer
|
Philsar
|
| FMC7G10US60 7070-12-ZDO |
IGBT
Compact & Complex Module
Building Entrance Terminal
Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:31.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 31.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
|
FAIRCHILD[Fairchild Semiconductor]
Bourns Inc.
Fairchild Semiconductor Corporation
|
| M3500-0408 |
400-800 MHZ TYPICAL OUTPUT FREQUENCY / MODULATION SENSITIVITY VERSUS TUNING VOLTAGE
|
Micronetics, Inc.
|
| M3500-0612 |
600-1200 MHZ TYPICAL OUTPUT FREQUENCY / MODULATION SENSITIVITY VERSUS TUNING VOLTAGE
|
Micronetics, Inc.
|
| M3500-2235 |
2250-3500 MHZ TYPICAL OUTPUT FREQUENCY / MODULATION SENSITIVITY VERSUS TUNING VOLTAGE
|
Micronetics, Inc.
|
| M3500-1324 |
2K. PERFORMANCE CURVES FOR M3500-1324
1350-2400 MHZ TYPICAL OUTPUT FREQUENCY / MODULATION SENSITIVITY VERSUS TUNING VOLTAGE
|
List of Unclassifed Manufacturers
ETC[ETC]
Micronetics, Inc.
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| KSC945Y KSC945CG KSC945CL KSC945CO KSC945CR KSC945 |
NPN Epitaxial Silicon Transistor
Audio Frequency Amplifier & High Frequency OSC.
Audio Frequency Amplifier & High Frequency OSC.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| 15GN01MA12 15GN01MA-TL-E ENA1100A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifi er Applications
|
Sanyo Semicon Device
|
| UPD30100GC-40-7EA |
Transmitter; Package: PG-TSSOP-16; Frequency Band: 315.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 5.0 dBm; Temperature Range: -40.0 - 125.0 °C
Transmitter; Package: PG-TSSOP-16; Frequency Band: 315.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 5.0 dBm; Temperature Range: -40.0 - 125.0 °C 64位微处理
|
Infineon Technologies AG
|
| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS
HIGH VOLTAGE NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
