| PART |
Description |
Maker |
| FM2G75US60 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 75A条一（c
Molding Type Module
|
Sharp, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五（巴西）国际消费电子展| 150A一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
| CM50DY12E |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 50A条一（c
|
Mitsubishi Electric, Corp.
|
| CM100DY24H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Toshiba, Corp.
|
| SIM100D06AV1 |
“HALF-BRIDGE?/a> IGBT MODULE
“HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
| DIM250PHM33-TL000 DIM250PHM33-TL000-15 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| SIM150D06AV1 |
“HALF-BRIDGE IGBT MODULE
“HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
| GP200MHS18 |
Half Bridge IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| BSM300GA170DN2E3166 300A17E2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
| BSM200GB120DN2 200B12N2 C67070-A2300-A70 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 40MT120UH 40MT120UHT |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a MTP package
HALF-BRIDGE IGBT MTP UltraFast NPT IGBT
|
IRF[International Rectifier]
|
