| PART |
Description |
Maker |
| GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| MJE18006-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE18002G |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE13007G |
NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE13007-P |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
Unisonic Technologies
|
| AN8026 |
Self-excited RCC pseudo-resonance type AC-DC switching power supply control IC 1 A SWITCHING CONTROLLER, PSIP9
IC,SMPS CONTROLLER,RESONANT-MODE,BIPOLAR,SIP,9PIN,PLASTIC
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MJE18204 MJF18204 ON2025 |
SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications
From old datasheet system
POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
| GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MJE13009-Q MJE13009G-Q-TA3-T MJE13009L-Q-TA3-T |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING APPLICATIONS
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING APPLICATIONS
|
Unisonic Technologies
|
