PART |
Description |
Maker |
PP900D060 |
POW-R-PAK 900A / 600V Half Bridge IGBT Assembly POW-R-PAK 900A / 600V Half Bridge IGBT Assembly 的POW - r -巴基斯坦900A / 600V的IGBT的半桥大
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Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
PP100B060 |
POW-R-PAK 100A / 600V H-Bridge IGBT Assembly
|
POWEREX[Powerex Power Semiconductors]
|
PP75B060 |
POW-R-PAK 75A / 600V H-Bridge IGBT Assembly
|
Powerex Power Semicondu...
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FQD24N08TM |
80V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 19.6 A, 80 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
Fairchild Semiconductor, Corp.
|
FQD11P06TF |
60V P-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 9.4 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
Fairchild Semiconductor, Corp.
|
SUD50P04-09L |
50 A, 40 V, 0.0094 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 TO-252, 3 PIN
|
Vishay Intertechnology, Inc.
|
SUR50N024-09P-T4-E3 SUR50N024-09P-E3 |
49 A, 22 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 TO-252, DPAK-3
|
Vishay Intertechnology, Inc. VISHAY SILICONIX
|
P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的,单台BLOk反应腔二极管隔离模块(二五?安高达2400伏特
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W 600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
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