| PART |
Description |
Maker |
| STP12NM5006 STB12NM50T4 STB12NM50-1 STP12NM50 STP1 |
12 A, 500 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-channel 550V @ tjmax - 0.30ヘ - 12A TO-220/FP/D2/I2PAK MDmesh⑩ Power MOSFET
N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh?/a> Power MOSFET
N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFET
|
STMicroelectronics
|
| IRF9510S IRF9510STRL IRF9510STRR |
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-4.0A)
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A)
|
IRF[International Rectifier]
|
| STD4N20 |
N-CHANNEL 200V - 1.2 OHM - 4A DPAK/IPAK MESH OVERLAY MOSFET
N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY MOSFET
N-CHANNEL 200V - 1.2 OHM - 4A DPAK/IPAK MESH OVERLAY MOSFET
N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY⑩ MOSFET
N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAYMOSFET
|
ST Microelectronics
STMicroelectronics
意法半导
|
| IRFD9110 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A)
Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-0.70A)
|
IRF[International Rectifier]
|
| ADG701BRM ADG701BRT ADG702 ADG702BRM ADG702BRT ADG |
CMOS Low Voltage 2ohm SPST Switches
Low Voltage SPST Switches(低压2Ω单刀单掷开
4 Ohm, Low Voltage, Wide Bandwidth Single SPST in 6-ld SOT-23, NC
CMOS Low Voltage 2 ohms SPST Switch
CMOS Low Voltage 2ohm SPST Switches 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8
|
Analog Devices, Inc.
AD[Analog Devices]
|
| IRFPC40 IRFPC40PBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.8A)
|
IRF[International Rectifier]
|
| IRFPC30 |
Power MOSFET(Vdsss=600V, Rds(on)=2.2ohm, Id=4.3A)
|
International Rectifier
|
| IRFBC30 |
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
|
International Rectifier
|
| IRFBC40A IRFBC40 |
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)
|
IRF[International Rectifier]
|
| W8NB80 STW8NB80 |
N - CHANNEL 800V - 1.2 Ohm - 7.5A - TO-247 PowerMESH MOSFET
N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| APT55M90BFN |
TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 550V V(BR)DSS | 63A I(D) 晶体管| MOSFET功率模块|半桥| 550V五（巴西）直| 63A条（丁）
|
Hangzhou Silan Microelectronics Co., Ltd.
|
