| PART |
Description |
Maker |
| LC361000AMLL-10X LC361000ARLL-10X LC361000ATLL-10X |
1 MEG (131072 words x 8 bits) SRAM
|
Sanyo Electric Co., Ltd.
|
| LC322271J LC322271T-70 LC322271T-80 LC322271M |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| LC371100ST-20LV LC371100SP-20LV LC371100SP-10LV LC |
1M Mask Rom Internal Clocked Silicon Gate(1M带内部定时硅门的掩膜 ROM) 100万掩模ROM内部时钟硅门00万带内部定时硅门的掩膜光盘）
1 MEG (131072 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 1迈可131072字8位）掩模ROM内部时钟硅门
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| IS45S16400F |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution
|
| 42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS45S16400E-6TLA1 IS45S16400E-7TLA1 IS45S16400E-7T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ETC[ETC]
|
| IS42S16400J-6TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| EDS2532AABJ-6B-E EDS2532AABJ-6BL-E |
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
|
| EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory
|
| EDD2508AKTA-5B-E EDD2508AKTA-5C-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
Elpida Memory, Inc.
|
