Part Number Hot Search : 
SC523 2SC3144 MA709 B1504ERU 1N3177R AN5838 NTE116 MHW6185B
Product Description
Full Text Search

MRF5S21150S - RF POWER FIELD EFFECT TRANSISTORS

MRF5S21150S_95318.PDF Datasheet

 
Part No. MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3
Description RF POWER FIELD EFFECT TRANSISTORS

File Size 553.35K  /  12 Page  

Maker


MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF5S21090H
Maker: N/A
Pack: N/A
Stock: 85
Unit price for :
    50: $29.82
  100: $28.32
1000: $26.83

Email: oulindz@gmail.com

Contact us

Homepage http://www.freescale.com/
Download [ ]
[ MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF5S21150S ]

[ Price & Availability of MRF5S21150S by FindChips.com ]

 Full text search : RF POWER FIELD EFFECT TRANSISTORS
 Product Description search : RF POWER FIELD EFFECT TRANSISTORS


 Related Part Number
PART Description Maker
MTM12P10 MTP12P06 MTP12P10 POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
RFK35N10 RFK35N08 POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
List of Unclassifed Manufacturers
ETC[ETC]
IRFF120 IRFF121 IRFF122 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
General Electric Solid State
GE Solid State
IRF530_D ON0283 IRF530-D IRF530/D 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
SSM3J01T Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
MRF6522-70 MRF6522-70R306 MRF6522-70R3 RF Power Field Effect Transistor
http://
Freescale Semiconductor, Inc
MRF21125 MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF8S8260HR3 MRF8S8260HSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF8S19260HR6 MRF8S19260HSR6 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF281 MRF281SR1 MRF281SR106 MRF281ZR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF8S18210WHS MRF8S18210WGHSR3 MRF8S18210WHSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
UFT150-28 RF POWER FIELD-EFFECT TRANSISTOR
Advanced Semiconductor, Inc.
 
 Related keyword From Full Text Search System
MRF5S21150S 参数比较 MRF5S21150S integrated gigabit MRF5S21150S oscillator MRF5S21150S Switching MRF5S21150S Filter
MRF5S21150S pressure sensor MRF5S21150S Logic MRF5S21150S ultra MRF5S21150S nec MRF5S21150S 0pam
 

 

Price & Availability of MRF5S21150S

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.2635509967804