PART |
Description |
Maker |
AKD4563A AK4563A AK4563AVF |
16bit 4AD/2DA APGA/ALC 3V Low Power 16bit 4ch ADC & 2ch DAC with ALC
|
AKM Asahi Kasei Microsystems
|
KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
CS5505 CS5508 CS5507 CS5506 CS5506-AP CS5508-AP CS |
VERY LOW POWER 16BIT AND 20 BIT A/D CONVERTERS 低功6位和20A / D转换 VERY LOW POWER 16BIT AND 20 BIT A/D CONVERTERS 低功16位和20位A / D转换
|
Cirrus Logic, Inc.
|
AK4563A AK4563AVF |
Low Power 16bit 4ch ADC & 2ch DAC with ALC Low Power 16bit 4ch ADC & 2ch DAC with ALC 低功6通道ADC
|
Asahi Kasei Microsystems Co.,Ltd Asahi Kasei Microsystems Co., Ltd.
|
KM416C256DLJ-7 KM416V256DLJ-5 KM416C256DLJ-5 KM416 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability
|
Samsung Electronic
|
HY57V561620CLT-6 HY57V561620CLT-8 HY57V561620CLT-K |
4 BANKS X 4M X 16BIT SYNCHRONOUS DRAM
|
Hynix Semiconductor
|
HY57V561620 HY57V561620LT-H HY57V561620LT-HP HY57V |
4Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/ |
1M x 16Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S511533F-YF |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
HY57V561620CLT HY57V561620CT |
4 Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|