PART |
Description |
Maker |
SDA9251-2X SDA92512 SDA9251-2XGEG |
868352-Bit Dynamic Sequential Access Memory for Television Applications (TV-SAM) 212K X 4 VIDEO DRAM, 25 ns, PDSO28 From old datasheet system 868352-Bit Dynamic Sequential Access ...
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
FM93C56EM8 FM93C56LMT8 FM93CS56LMT8 FM93CS56LEM8 F |
(MICROWIRE??Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read RES, 0603, SMD, 0.1%, TKF 11.8K (MICROWIREBus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read 2048-Bit Serial CMOS EEPROM With Data Protect and Sequential Read(带连续读操作和数据保护的2048位串行CMOS EEPROM) (MICROWIRE?/a> Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read (MICROWIRE Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read (MICROWIRE?Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
|
Fairchild Semiconductor Corporation
|
HYB514400BJ-BT60 Q67100-Q749 Q67100-Q750 Q67100-Q7 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 70 ns, PDSO20 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20 RES 121-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
|
SIEMENS AG Siemens Semiconductor G...
|
HYB5117800BSJ-50- Q67100-Q1092 Q67100-Q1093 HYB311 |
2M x 8 - Bit Dynamic RAM 2k Refresh 2M×8-Bit Dynamic RAM (Fast Page Mode)(2M×8动态RAM(快速页面模)
|
SIEMENS AG SIEMENS A G
|
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
M5M4416P M5M4416P-12 M5M4416P-15 |
65536 Bit (16384 Word by 4 Bit) Dynamic Ram 65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
HYB5118165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-50 |
-1M x 16-Bit Dynamic RAM 1k & 4k Refresh 1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM361140GS-70 HYM361140GS-60 HYM361140S-70 HYM361 |
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 100万36位动态RAM模块米18位动态随机存储器模块 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器 High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http:// SIEMENS A G SIEMENS AG
|
82S131 N82S131A N82S130N N82S131N N82S130A N82S131 |
V(cc): 7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion 2K-bit TTL bipolar PROM 512 X 4 OTPROM, 50 ns, PDIP16
|
List of Unclassifed Manufacturers Philips Semiconductors ETC Electronic Theatre Controls, Inc. NXP Semiconductors N.V.
|
MK31VT432-10YC |
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?) 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK)(4分字× 32位同步动态内存模块) 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块) From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|