| PART |
Description |
Maker |
| FCH10A06 |
SBD
Schottky Barrier Diode
|
Nihon Inter Electronics Corporation
|
| FCH10A09 |
SBD
Schottky Barrier Diode
|
Nihon Inter Electronics Corporation
|
| KCH20A09 |
Schottky Barrier Diode 20 A, 90 V, SILICON, RECTIFIER DIODE
SBD
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| MA10704 |
Schottky Barrier Diodes (SBD) 0.2 A, 20 V, SILICON, SIGNAL DIODE
|
Panasonic Corporation
Panasonic, Corp.
|
| MA2C700A MA2C700 |
Schottky Barrier Diodes (SBD) SILICON, L BAND, MIXER DIODE, DO-34
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| UPA507TE-T2 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| CPH5701 |
TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| MA3X789 MA789 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
|
| CPH6702 1160 |
TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| MCH5837 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
