PART |
Description |
Maker |
28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32 Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECTOR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
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http:// Maxwell Technologies, Inc
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EN29F010-45TCP EN29F010-70JIP EN29F010-70PCP EN29F |
1 Megabit (128K x 8-bit) 5V Flash Memory 1兆位128K的8位)5V的快闪记忆体 Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOIC-Wide; No of Pins: 20; Container: Tape & Reel 1兆位128K的8位)5V的快闪记忆体 1 Megabit (128K x 8-bit) 5V Flash Memory 1兆位28K的8位)5V的快闪记忆体
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Electronic Theatre Controls, Inc. Eon Silicon Solution Inc. Eon Silicon Solution In...
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AM27C2048 AM27C2048-120DC AM27C2048-120DC5 AM27C20 |
2 Megabit (128 K x 16-Bit) CMOS EPROM 128K X 16 OTPROM, 120 ns, PQCC44 2 Megabit (128 K x 16-Bit) CMOS EPROM 2兆位28亩16位)的CMOS存储 2 Megabit (128 K x 16-Bit) CMOS EPROM 2兆位28亩16位)CMOS存储 TESTER FLAT CABLE 2兆位28亩16位)的CMOS存储 2 Megabit (128 K x 16-Bit) CMOS EPROM 128K X 16 UVPROM, 55 ns, CDIP40 4-Bit Binary Full Adders With Fast Carry 16-SO 0 to 70 2兆位128亩16位)的CMOS存储 TESTER MODULAR CABLE RJ45/12/11 4-Bit Binary Full Adders With Fast Carry 16-SOIC 0 to 70 Evaluation Kit for the MAX3869 2 megabit CMOS EPROM
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SPANSION LLC Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
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AT29LV010A-12TC AT29LV010A-12JI AT29LV010A-20JI AT |
120NS, TSOP, COM TEMP(FLASH) 128K X 8 FLASH 3V PROM, 120 ns, PDSO32 1-megabit (128K x 8) 3-volt Only Flash Memory
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Atmel, Corp. ATMEL Corporation
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EN29LV010-90TC EN29LV010-70TCP EN29LV010-70SCP EN2 |
1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory 1兆位28K的8位)统一部门.0伏的CMOS只闪 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory 1兆位28K的8位)统一部门3.0伏的CMOS只闪 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory 1兆位128K的8位)统一部门.0伏的CMOS只闪
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Eon Silicon Solution Inc. Electronic Theatre Controls, Inc. Eon Silicon Solution, Inc.
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28LV010RT4FS25 28LV010 28LV010RPDB20 28LV010RPDB-2 |
3.3V 1 Megabit (128K x 8-Bit) EEPROM
|
MAXWELL[Maxwell Technologies]
|
28C011TRTFS-20 28C011T 28C011TRPF 28C011TRPFB 28C0 |
1 Megabit (128K x 8-Bit) EEPROM
|
MAXWELL[Maxwell Technologies]
|
28C011TRT2F 28C011TRT2FB 28C011TRT2FE 28C011TRT2FI |
1 megabit (128K x 8-bit) - EEPROM 1 Megabit (128K x 8-Bit) EEPROM
|
Maxwell Technologies ETC
|
28C010TRPDB-12 28C010TRPDB-15 28C010TRPDE-12 28C01 |
1 Megabit (128K x 8-Bit) EEPROM
|
MAXWELL[Maxwell Technologies]
|
SST29LE010-120-3C-E SST29LE010-120-3C-EH SST29LE01 |
1 Megabit (128K x 8) Page Mode EEPROM
|
Silicon Storage Technology, Inc
|
29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
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Turbo IC
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SST27VF010 SST27SF010 27XF010 |
1 Megabit (128K x 8) SuperFlash MTP From old datasheet system
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SST
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