| PART |
Description |
Maker |
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| TPCP8J0107 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| CMLM3405 |
MULTI DISCRETE MODULE?/a> SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| BUP53 |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
Seme LAB
|
| BUR50 BUR5009 |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
Seme LAB
|
| BUX20 |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
Seme LAB
|
| MMDT2907A |
PNP Silicon Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| CTLM1034-M832D |
MULTI DISCRETE MODULE 垄芒 SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER
MULTI DISCRETE MODULE ?SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|
| D2232UK D1212UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-7.2V-850MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-7.2V-850MHz,单端)
|
SEME-LAB[Seme LAB]
Semelab(Magnatec)
|
| CMLM2205 |
MULTI DISCRETE MODULESURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 600 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| D2294UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(15W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应15W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| TPCP8H01 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
