| PART |
Description |
Maker |
| UPD16901 UPD16901GS |
FLASH MEMORY VOLTAGE STEPUP DC/DC CONVERTER IC
|
NEC Corp.
NEC[NEC]
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory
90ns 2M-bit CMOS flash memory
70ns 2M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
| AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc.
SPANSION LLC
|
| M25P40-VMN M25P40-VMN6T M25P40-VMW6T -M25P40-VMN6T |
4 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
|
意法半导
STMicroelectronics N.V.
|
| M45PE10 M45PE10-VMP6 M45PE10-VMP6TG M45PE10-VMP6TP |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V.
意法半导
|
| UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting
Silicon NPN epitaxial planar type
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| AM29LV040B-70JF |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:40Mbit; Package/Case:32-PLCC; Peak Reflow Compatible (260 C):No; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 512K X 8 FLASH 3V PROM, 70 ns, PQCC32
|
Spansion, Inc.
|
| M59DR032A M59DR032B M59DR032A120ZB1T M59DR032A100Z |
2M X 16 FLASH 1.8V PROM, 120 ns, PBGA48
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory 32兆位Mb x16插槽，双行，第低压闪
32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
|
http://
NUMONYX
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M25P64-VMF6TP M25P64-VME6 M25P64-VMF6 M25P64 M25P6 |
16-Bit Bus Transceiver And Register With 3-State Outputs 56-SSOP -40 to 85
4 Mbit Uniform Sector, Serial Flash Memory
64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MB84VB2000-10 MB84VB2001 MB84VB2001-10 |
PT 8C 8#20 PIN RECP 1M X 8 FLASH 3V PROM, 100 ns, PBGA48
8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
