PART |
Description |
Maker |
APT12057B2LL APT12057LLL |
POWER MOS 7 1200V 22A 0.570 Ohm
|
Advanced Power Technology
|
APT10026L2FLL |
Circular Connector; No. of Contacts:61; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No POWER MOS 7 1000V 38A 0.260 Ohm 1000V, 38A power MOS 7 transistor
|
Advanced Power Technology Ltd.
|
APT10090BFLL APT10090SFLL |
POWER MOS 7 1000V 12A 0.900 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technolo... Advanced Power Technology Ltd.
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APT10086BLC APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
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APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS V 1000V 21A 0.500 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT1004RGN |
POWER MOS IV 1000V 3.3A 4.00 Ohm N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
|
Advanced Power Technology Ltd.
|
APT1001R1BN APT1001R3BN |
POWER MOS IV 1000V 10.5A 1.10 Ohm / 1000V 10.0A 1.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS LJT 56C 48#20 8#16 PIN RECP Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No N沟道增强型高压功率MOSFET
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
|
MCT3D65P100F2 MCT3A65P100F2 |
65A, 1000V, P-Type MOS-Controlled Thyristor (MCT) DIODE ZENER SINGLE 500mW 3.9Vz 5mA-Izt 0.05 3uA-Ir 1 PowerDI-323 3K/REEL 65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
APT10035B2LL APT10035LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 28A 0.350 Ohm LED Lamp; Color:Red/Red; Leaded Process Compatible:Yes Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
http:// Advanced Power Technology Ltd.
|
APT10026L2LL |
LJT 61C 61#20 SKT WALL RECP POWER MOS 7 1000V 38A 0.260 Ohm
|
Advanced Power Technology Ltd.
|