PART |
Description |
Maker |
MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 250 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
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MMDF4P03HD |
DUAL TMOS POWER MOSFET 30 VOLTS
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
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MTDF1P02HD |
DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM
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Motorola, Inc.
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MTDF1N02HD ON2522 ON2521 |
DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM From old datasheet system
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MOTOROLA[Motorola, Inc]
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MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
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MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
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MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM TMOS POWER FET 12 AMPERES 60 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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MMSF7N03Z MMSF7N03Z_D ON2275 MMSF7N03ZR2 |
7.5 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS From old datasheet system
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Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
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MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1200 VOLTS
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ON Semiconductor
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MTD1N80E MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
|
ON Semiconductor Motorola, Inc
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MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G |
TMOS Power FET TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
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ONSEMI[ON Semiconductor]
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