PART |
Description |
Maker |
PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦,1.0 GHz的GOLDMOS场效应晶体管 12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10052 |
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10134 |
100 Watts, 2.1.2 GHz GOLDMOS Field Effect Transistor 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTF10193 |
12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
PE6818 |
40 Watts Medium Power WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
PE6806 PE6806-16 |
2 Watts Low Power WR-90 Waveguide Load 8.2 GHz to 12.4 GHz
|
Pasternack Enterprises,...
|
PTB20176 |
5 Watts, 1.78-1.92 GHz RF Power Transistor 5瓦,1.78-1.92 GHz射频功率晶体 5 Watts, 1.78?.92 GHz RF Power Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
2F-10 |
up to 3 GHz 2 Watts
|
Inmet Corporation
|
PH1214-110M |
Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty Radar Pulsed Power Transistor - 110 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 110瓦特,1.20 - 1 .40千兆赫,150毫秒脉冲10%的
|
Vishay Intertechnology, Inc. MACOM[Tyco Electronics]
|