| PART |
Description |
Maker |
| PTF10036 |
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
| MAFRIN0448 |
Ultra Low Loss Isolator 860 MHz - 960 MHz
|
MACOM[Tyco Electronics]
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| PTB20155 |
9 Watts, 610-960 MHz UHF Power Transistor 9瓦，610-960 MHz的超高频功率晶体
|
ERICSSON[Ericsson]
|
| PTF10195 |
125 Watts 869-894 MHz GOLDMOS Field Effect Transistor
125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PTF10161 |
165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| TAN15 |
15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz
|
GHZTECH[GHz Technology]
|
| PTB20007 |
30 Watts, 93560 MHz Cellular Radio RF Power Transistor
30 Watts, 935-960 MHz Cellular Radio RF Power Transistor
30 Watts 935-960 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
