| PART |
Description |
Maker |
| FAB0109007 |
Fan cooled PSU for embedded railways applicatio
|
Power System Technology
|
| 2SC4635LS |
NPN Triple Diffused Planar Silicon Transistor 1500V / 20mA High-Voltage Amplifier, High-Voltage Switching Applications
1500V/20mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| SB002-15SPA SB002-15CPA |
150V/ 20mA Rectifier
Shottky barrier diode, 150V/20mA rectifier
150V, 20mA Rectifier
Small signal(single type)
|
Sanyo Electric Co.,Ltd.
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| 2SC4578 |
NPN Triple Diffused Planar Silicon Transistor 900V/50mA Switching Applications
|
SANYO
|
| TLSU1002AT02 TLGU1002AT02 TLPGU1002AT02 EA09751 TL |
TOSHIBA LED lamp. Color amber. Peak emission wavelength(typ) @20mA 596 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
TOSHIBA LED lamp. Color yellow. Peak emission wavelength(typ) @20mA 590 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
LED LAMP PANEL CIRCUIT INDICATOR
From old datasheet system
TOSHIBA LED lamp. Color pure-green. Peak emission wavelength(typ) @20mA 562 nm. Luminous intensity @20mA 1.53(min), 6(typ) mcd.
TOSHIBA LED lamp. Color green. Peak emission wavelength(typ) @20mA 574 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
|
TOSHIBA[Toshiba Semiconductor]
Marktech Optoelectronics
|
| STU8NB90 6380 |
N-CHANNEL 900V - 0.7 Ohm - 8.9A - Max220 PowerMESH MOSFET
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 900V - 0.7 - 8.9A - Max220 PowerMESH TM MOSFET
N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FQI3N90 FQB3N90 FQB3N90TM FQI3N90TU |
900V N-Channel MOSFET(漏源电压900V的N沟道增强型MOSFET)
900V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| EDS-220-Z-LA-I EDS-260-Z-LA-I EDS-370-Z-LA-I EDS-2 |
POSITION, LINEAR SENSOR-INDUCTIVE, 220mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 260mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 370mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 250mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 300mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 100mm, 4-20mA, CYLINDRICAL
|
Micro-Epsilon Group
|
| FQA11N90C |
900V N-Channel MOSFET 11 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
900V N-Channel Advanced QFET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQA9N90C |
900V N-Channel Q-FET
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STB6NB90 6439 |
N - CHANNEL 900V - 1.7 Ohm - 5.8A - D 2 PAK PowerMESH MOSFET
From old datasheet system
N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET
N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
ST Microelectronics
|
| STU7NB90I STU7NB90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh MOSFET
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET
N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMeshMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
