| PART |
Description |
Maker |
| BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF901R BF901 |
Silicon n-channel dual gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF908R BF908 BF908-R_2 |
Dual-gate MOS-FETs
From old datasheet system
|
Philips
|
| BF1105WR BF1105R BF1105 BF1105_R_WR_3 |
N-channel dual-gate MOS-FETs
From old datasheet system
|
Philips
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| 2SK2276 |
Power F-MOS Fets - Silicon N-Channel MOS
|
Panasonic
|
| 2SK1374 |
Small-signal device - Small-signal FETs - MOS FETs
From old datasheet system
SMini3-G1
|
panasonic
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF1203 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| 2SK0614 2SK614 |
Small-signal device - Small-signal FETs - MOS FETs
From old datasheet system
TO-92-A1
|
panasonic
|
