| PART |
Description |
Maker |
| BF994S BF994 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BF998WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF996S |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
Philips Semiconductors
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| 3SK321 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK318 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| 3SK317 3SK317ZR-TL-E |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Renesas Electronics Corporation
|
| 3SK317 |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| UPA1770 UPA1770G PA1770 G14055EJ1V0DS00 UPA1770G-E |
P-channel enhancement type power MOS FET(Dual type)
SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
From old datasheet system
|
NEC[NEC]
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| BF991 BF991-2015 |
N-channel dual-gate MOS-FET
N-channel dual-gate MOSFET
|
Quanzhou Jinmei Electronic ...
NXP Semiconductors
|
