| PART |
Description |
Maker |
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| KDR720S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR400S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION, SWITCHING SUPPLY)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| RB521ZS-301 |
Schottky Barrier Diode
0.1 A, 30 V, SILICON, SIGNAL DIODE ULTRA SMALL, GMD2, 2 PIN
Schottky Barrier Diode
|
Rohm
Incon, Inc.
|
| BAT54WS BAT54WS-7-F |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
DIODE SCHOTTKY 30V 200MW SOD-323 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| CDBURT0230L-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.2A
Low Profile SMD Schottky Barrier Diode
|
Comchip Technology
|
| HSB88WK |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
