PART |
Description |
Maker |
AD6421AST AD6422AST AD6423 AD20MSP415 |
DIODE ZENER 5.6V 500MW GSM/DCS1800/PCS1900 Baseband Processing Chipset
|
ANALOG DEVICES INC AD[Analog Devices]
|
AD7002 AD7002AS |
LC2MOS GSM Baseband I/O Port
|
AD[Analog Devices]
|
AD6526ACA |
GSM/GPRS SoftFone Baseband Processor
|
Analog Devices
|
AD6528 |
GSM/GPRS Digital Baseband Processor
|
Analog Devices
|
CX80501-31 CX80501-32 |
CX805-30 Baseband Processor for Multiband GSM and GPRS Applications
|
Skyworks Solutions Inc.
|
AD6650BBC1 AD6650PCB |
Diversity IF to Baseband GSM/EDGE Narrowband Receiver 多样性IF到基带的GSM / EDGE窄带接收
|
Analog Devices, Inc.
|
TDA5235 |
Enhanced Sensitivity Double-Configuration Receiver with Digital Baseband Processing
|
Infineon Technologies AG
|
MRFIC1859 |
Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功
|
Motorola, Inc.
|
422B 422E |
Max voltage:24V; 200mA; data processing data line protector. For data processing equipment, long line transmission systems, control processing computers, building managenent systems
|
Protek Devices
|
MRF18030BLSR3 MRF18030BSR3 MRF18030BR3 MRF18030BLR |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc. MOTOROLA[Motorola Inc] Freescale (Motorola)
|