PART |
Description |
Maker |
BF1211 BF1211WR BF1211R BF1211-15 BF1211-2015 |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs
|
Quanzhou Jinmei Electro... PHILIPS[Philips Semiconductors] NXP Semiconductors ETC
|
BF1100 BF1100R |
Dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors]
|
BF908R BF908 BF908-R_2 |
Dual-gate MOS-FETs From old datasheet system
|
Philips
|
2SK1215 2SK1215D |
Silicon N-Channel MOS FET Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset Silicon N Channel MOS FETs
|
HITACHI[Hitachi Semiconductor]
|
BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
BF1100R BF1100 BF1100_1 BF1100-15 BF1100-2015 |
Dual-gate MOS-FETs From old datasheet system
|
Quanzhou Jinmei Electro... Philips
|
BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix Vishay Telefunken
|
BF1203 BF1203-2015 |
Dual N-channel dual gate MOS-FET
|
Quanzhou Jinmei Electro... NXP Semiconductors
|
BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|