| PART |
Description |
Maker |
| EXB356 |
HYBRID ICS FOR BASE DRIVING OF POWER TRANSISTOR MODULE
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| M57950L |
HYBRID IC FOR DRIVING TRANSISTOR MODULES
|
Mitsubishi Electric Semiconductor
|
| ZXTN10150DZ |
150V NPN LED DRIVING TRANSISTOR
|
DIODES
|
| ZXTP4003Z ZXTP4003ZTA |
100V PNP LED DRIVING TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| BUL54AFI BUL52BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 4 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
| TCS800 |
high power COMMON BASE bipolar transistor.
|
ADPOW[Advanced Power Technology]
|
| 2316226 |
End cover for FB-PS-BASE/EX base. Use in power and indicator bus at each end base.
|
PHOENIX CONTACT
|
| AN685 |
USING TD300 IN POWER MOST AND IGBT DRIVING
|
SGS Thomson Microelectronics
|
