| PART |
Description |
Maker |
| FA1L4Z FA1L4 FA1L4Z-L FA1L4Z-T2B |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| FA1A4M FA1A4M-T2B FA1A4M-L FA1A4M-T1B |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
|
NEC
|
| FA1A4Z FA1A4ZL68 FA1A4ZL67 FA1A4ZL69 FA1A4Z-L FA1A |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-346
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN
|
NEC Corp.
ON Semiconductor
|
| BA1A4Z BA1A4Z-T BA1A4Z-T/JM BA1A4ZM-T BA1A4ZM BA1A |
Compound transistor
on-chip resistor PNP silicon epitaxial transistor 芯片电阻进步党硅外延晶体
|
NEC[NEC]
NEC, Corp.
|
| BA1L3N BA1L3N-T BA1L3N-T/JM |
on-chip resistor NPN silicon epitaxial transistor 片上NPN硅外延电阻晶体管
Compound transistor
|
NEC, Corp.
NEC[NEC]
|
| BN1A3Q BN1A3Q-T BN1A3Q-T/JM BN1A3QM BN1A3QM-T BN1A |
Compound transistor
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
|
NEC[NEC]
NEC Corp.
|
| BN1L3N BN1L3N-T BN1L3N-T/JM |
COMPOUND TRANSISTOR
|
NEC[NEC]
|
| BA1A3Q BA1A3Q-T BA1A3Q-T/JM BA1A3QM-T BA1A3Q/JM |
COMPOUND TRANSISTOR
|
NEC[NEC]
NEC Corp.
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252
MEDIUM POWER TRANSISTOR 中功率晶体管
|
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UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
