PART |
Description |
Maker |
K4S511533F-YF |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S51163LF-YPC/L/F1L K4S51163LF-YPC/L/F75 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4M28163PH-RBC K4M28163PH-RBE K4M28163PH-RBF1L K4M |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S51163PF-YF K4S51163PF-F1L K4S51163PF-F90 K4S511 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 8M x 16Bit x 4 Banks Mobile-SDRAM 8米16 × 4银行移动SDRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
HY57V561620CLT-6 HY57V561620CLT-8 HY57V561620CLT-K |
4 BANKS X 4M X 16BIT SYNCHRONOUS DRAM
|
Hynix Semiconductor
|
IC43R16800 |
2M x 16bit x 4 Banks DDR SDRAM
|
Integrated Circuit Solution
|
TTS3816B4E |
2M x 16Bit x 4 Banks synchronous DRAM
|
TwinMOS
|
K4S161622D K4S161622D-TC/L10 K4S161622D-TC/L55 K4S |
512K x 16Bit x 2 Banks Synchronous DRAM
|
Samsung Electronic Samsung semiconductor
|
K4S561632D |
4M x 16Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
IC42S16400A-7BIG IC42S16400A-6BG IC42S16400A-6BIG |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM 100万16 × 4银行4兆位)内
|
Elpida Memory, Inc. Integrated Circuit Solu...
|