| PART |
Description |
Maker |
| MCM69F618CTQ12 MCM69F618CTQ12R MCM69F618CTQ10 MCM6 |
64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 12 ns, PQFP100
64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 9 ns, PQFP100
|
MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| MCM67J618B MCM67J618BFN5 MCM67J618BFN7 |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| MCM67H618A MCM67H618AFN10 MCM67H618AFN12 MCM67H618 |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| MCM67B618A MCM67B618AFN10 MCM67B618AFN12 MCM67B618 |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
|
| MCM67C618BFN7 MCM67C618B MCM67C618BFN5 |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| KM41464A KM41464A-12 KM41464A-15 KM41464AJ KM41464 |
64K x 4-Bit DRAM
64K X 4 BIT DYNAMIC RAM WITH PAGE MODE 64K的4位动态内存页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM64258C |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM64258E |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MCM67A618 MCM67A618FN10 MCM67A618FN12 MCM67A618FN1 |
64K x 18 Bit Asychronous/Latched Address Fast Static RAM 64K X 18 CACHE TAG SRAM, 10 ns, PQCC52
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MCM67J518 MCM67J518FN6 MCM67J518FN7 MCM67J518FN9 |
32K x 18 Bit BurstRAM Synchronous Fast Static RA
|
MOTOROLA[Motorola, Inc]
|
