
	Part Number	Hot Search : JCH3201 N5822 AARS35Z 14073 E1209 DM114E SSG9435J WT431LB
	Product Description
	Full Text Search

MX29L1611G - 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM

MX29L1611G_159255.PDF Datasheet

Part No.

Description

16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM

File Size

377.97K / 34 Page

Maker

MCNIX[Macronix International]

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MX29L1611MC-10

Maker: MX

Pack: SOP44

Stock: Reserved

Unit price for :

50: $1.85

100: $1.75

1000: $1.66

Email: oulindz@gmail.com

Homepage

http://www.macronix.com/

Download

] :-)

Full text search : 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM

Related Part Number

PART	Description	Maker
MX23L1651MC-50G MX23L1651 MX23L1651HC-15	16M-BIT [16M x 1] CMOS SERIAL MASK-ROM	MCNIX[Macronix International]
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40	16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system	Infineon SIEMENS[Siemens Semiconductor Group]
UPD4616112F9-B85LX-BC2 UPD4616112F9-B95LX-BC2 UPD4	16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION	NEC Corp.
MBM29F016A-90 MBM29F016A-90PFTR MBM29F016A MBM29F0	FLASH MEMORY CMOS 16M (2M x 8) BIT	SPANSION[SPANSION]
MX27C1610	16M-BIT [2M x 8/1M x 16] CMOS OTP ROM	Macronix International
MX27C1610 27C1610-10 27C1610-12	16M-BIT [2M x 8/1M x 16] CMOS OTP ROM	MCNIX[Macronix International]
MBM29F160TE70TR MBM29F160BE70TR MBM29F160TE70	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT	SPANSION[SPANSION]
TC59S1608FT-12	CMOS 16M-bit Synchronous DRAM	ETC
MBM29LV160T-90PFTN MBM29LV160T-90PFTR MBM29LV160B-	FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT	SPANSION[SPANSION]
TC58V16BFT	16M-Bit CMOS NAND Flash EPROM	Toshiba Semiconductor
NN5216805	(NN5216405 / NN5216805) CMOS 16M-Bit SDRAM	Nippon Steel Semiconductor
K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9	16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存 16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.

Related keyword From Full Text Search System

MX29L1611G Untuk apa ic	MX29L1611G Nation	MX29L1611G bridge	MX29L1611G Digital	MX29L1611G diode
MX29L1611G Mixed	MX29L1611G описание	MX29L1611G system	MX29L1611G international	MX29L1611G Planar