| PART |
Description |
Maker |
| HCPL-6250 HCPL-625K HCPL-625X 5962-8876801PA 5962- |
Hermetically Sealed. Low If. Wide Vcc. Logic Gate Optocouplers 密封。如果低。宽的VCC。逻辑门光电耦合
HCPL-523K-300 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-523K-100 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KXA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-520K-100 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-520K-300 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KPC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KXA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801PC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KPA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901PA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801PA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801XA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801YA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801YC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KYA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KYC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901PC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901XA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901YA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901YC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-88769022A · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876903FC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KPA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KPC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KYA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KYC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876905K2A · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876906KFC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
|
Avago Technologies, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| 5962-8978501YA 5962-8978501PC 5962-8978501YC 5962- |
5962-8978501YA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501YC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-89785022A · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501ZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KYA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-9800201KFC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8981001PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
6N140A/883B · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
8302401FC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
|
Agilent (Hewlett-Packard)
|
| S3C80A4 S3C80A5 S3C80A8 S3P80A5 S3C80B4 S3C80B5 S3 |
SH2 Series, 7147 Group, Two ADC circuits, 5-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, AUD FP-100U; Vcc= 4.5 to 5.5 volts, Temp= -40 to 85 C; Package: PLQP0100KB-A S3C8系列8位单芯片CMOS微控制器提供了快速，高效的CPU
S3C8-series of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| ST2378ETTR ST2378E ST2378E-06 ST2378EBJR |
8-bit dual supply 1.71V to 5.5V level translator with I/O VCC ± 15KV ESD protection
8-bit dual supply 1.71V to 5.5V level translator with I/O VCC 【 15KV ESD protection
|
STMICROELECTRONICS[STMicroelectronics]
|
| BC808W BC808-40W BC807-25W BC807W BC807-40W BC808- |
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -20 to 85 C; Package: PTQP0100KA-A
Surface mount Si-Epitaxial PlanarTransistors 表面贴装硅外延PlanarTransistors
|
Diotec Elektronische
DIOTEC[Diotec Semiconductor]
Diotec Semiconductor AG
|
| MC100H646 MC100EP445FA MC100E156FNR2 MC100EPT22D M |
PECL/TTL-TTL 1:8 Distribution Chip
3.3V / 5VECL 8-Bit Serial/Parallel Converter
5V ECL 3-Bit 4:1 Mux-Latch
3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator
3.3V / 5V ECL 6-Bit Differential Register with Master Reset
3.3V / 5V 2-Input Differential AND/NAND
3.3V / 5V ECL ÷2 Divider
5V ECL Divide by 2, Divide by 4/6 Clock Generation Chip
5V ECL Low Impedance Driver
|
ON Semiconductor
|
| 82S147A 82S147AN N82S147 N82S147AA N82S147AN N82S1 |
4K-BIT TTL BIPLOAR PROM
4K Bit TTL Bipolar PROM
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| 82S129 N82S126A N82S126N N82S129A N82S129N 82S126 |
V(cc): 7.0V; V(in): 5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc.
1K BIT TTL BIPOLAR PROM
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MC100H680 MC100H680FN MC10H680 MC10H680FN ON0804 M |
From old datasheet system
4-Bit Differential ECL Bus/TTL Bus Transceiver
4-Bit Differential ECL Bus/TTL Bus Transceciver
|
ONSEMI[ON Semiconductor]
Motorola, Inc
|
| AT15-0001 |
0 MHz - 2000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 7.3 dB INSERTION LOSS-MAX
Digital Attenuator/ 31 dB/ 5-Bit/ TTL Driver DC - 2.0 GHz
Digital Attenuator, 31 dB, 5-Bit, TTL Driver DC - 2.0 GHz
|
MACOM[Tyco Electronics]
|
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