| PART |
Description |
Maker |
| NCP51510MNTWG |
3 Amp VTT Termination Source / Sink Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| ISL6532C |
ACPI Regulator/Controller for Dual Channel DDR Memory Systems
|
INTERSIL[Intersil Corporation]
|
| ISL6537ACRZ ISL6537ACRZA |
ACPI Regulator/Controller for Dual Channel DDR Memory Systems
|
Intersil Corporation
|
| ISL6537ACR ISL6537ACRZ-T ISL6537A ISL6537ACR-T ISL |
ACPI Regulator/Controller for Dual Channel DDR Memory Systems
|
INTERSIL[Intersil Corporation]
|
| GS8182S18GD-267 GS8182S18GD-267T GS8182S18GD-267I |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, LEAD FREE, FBGA-165
18Mb Burst of 2 DDR SigmaSIO-II SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| HY5DU121622ALT-D4 HY5DU121622ALT-M HY5DU12422AT HY |
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| EDD1216AASE EDD1216AASE-7A-E EDD1216AASE-6B-E |
ER 3C 3#8 SKT PLUG LINE 8M X 16 DDR DRAM, 0.7 ns, PBGA60
128M bits DDR SDRAM (8M words x 16 bits) 8M X 16 DDR DRAM, 0.75 ns, PBGA60
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| MT46H8M16LF |
Mobile Double Data Rate (DDR) SDRAM 移动双倍数据速率（DDR）SDRAM内存
|
Micron Technology, Inc.
|
| HYMD564646AL8-H HYMD564646AL8-K HYMD564646A8-H HYM |
Unbuffered DDR SDRAM DIMM
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| MT18VDDF12872HY-335XX MT18VDDF12872HG-265 MT18VDDF |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
DDR SDRAM SODIMM
|
Micron Technology
|
