| PART |
Description |
Maker |
| 2SB1181 |
Hight breakdown voltage and high current. Low VCE(sat).
|
TY Semiconductor Co., Ltd
|
| 2SD1614 |
World standard miniature package. High dc current gain. Low VCE(sat).
|
TY Semiconductor Co., Ltd
|
| NSS12600CF8 |
12V 6A LOW VCE(sat) PNP High Current Transistor ChipFET™
|
ON Semiconductor
|
| 2SB1424 |
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
|
TY Semiconductor Co., Ltd
|
| 2SD1823 |
High forward current transfer ratio hFE. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| 2SA211212 EN7379A EN7379 |
Bipolar Transistor, -50V, -3A, Low VCE(sat), PNP Single NMP
High Current Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| FZT853 |
Extremely low equivalent on-resistance; RCE(sat) 44mù at 5A, 6 Amps continuous current, up to 20 Amps peak current
|
TY Semiconductor Co., Ltd
|
| TSB1184CPS TSB1184 TSB1184CP TSB1184CPQ TSB1184CPR |
Low Vce(sat) PNP Transistor 低Vce（sat）PNP晶体
|
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
|
| TSD882S |
Low Vce(sat) NPN Transistor 低Vce（sat）NPN晶体
|
Taiwan Semiconductor Co., Ltd.
|
| 2SD2150 |
Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.
|
TY Semiconductor Co., Ltd
|
