| PART |
Description |
Maker |
| IC61S25636T-133TQI IC61S25636T-200TQ IC61S25636T-2 |
8Mb SyncBurst Pipelined SRAM
|
Integrated Circuit Solu...
|
| MT58L512L18D MT58L256L32D MT58L1MV18D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
|
MICRON[Micron Technology]
|
| MT58L64L32FT-6.8 MT58L64L36FT-6.8 MT58L64V32FT-6.8 |
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的：128K的1864K的x 32/36流通过SYNCBURST的SRAM
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的：128K的184K的x 32/36流通过SYNCBURST的SRAM
|
Micron Technology, Inc.
|
| GS78108B-12 GS78108B-12I GS78108B GS78108B-10 GS78 |
1M x 8 8Mb Asynchronous SRAM 1M X 8 STANDARD SRAM, 15 ns, PBGA119
|
GSI Technology, Inc.
|
| GS78132AB |
8Mb Asynchronous SRAM
|
N.A.
|
| MT55L512V18F MT55L256V32F MT55L256V36F |
(MT55LxxxLxxF) 8Mb SRAM
|
Micron Technology
|
| DS1265W-100IND |
3.3V 8Mb Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
| DS3065WP-100IND DS3065WP |
3.3V, 8Mb, Nonvolatile SRAM with Clock
|
Maxim Integrated Products
|
| IBM0418A41BLAB |
(IBM04xxAx1BLAB) 8Mb and 4Mb SRAM
|
IBM Corporation
|
| DS2065W DS2065W-100 |
3.3V Single-Piece 8Mb Nonvolatile SRAM
|
Maxim Integrated Products
|
