PART |
Description |
Maker |
NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管 0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp. NEC[NEC]
|
NE650R479A NE650R479A-T1 |
0.4 W L, S-BAND POWER GaAs MES FET 0.4册,S波段功率GaAs场效应晶体管 0.4 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NES2427P-45 |
45 W S-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp.
|
NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC] ETC
|
NE722S01 NE722S01-T NE722S01-T1B1 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
Duracell NEC Corp. NEC[NEC]
|
NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
GN2011 |
GaAs N-Channel MES IC
|
Panasonic
|
GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais) Panasonic Semiconductor
|
CFH2162-P1 CFH2162-P109 |
800 to 900 MHz 36 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
SGM2016M/P |
GaAs N-channel Dual-Gate MES FET
|
SONY
|
SGM2014AN SGM2014 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|