| PART |
Description |
Maker |
| MRF275G MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| 2SK2876-01MR |
N-channel MOS-FET 6 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK1522-E 2SK1521 2SK1521-E 2SK1522 |
Silicon N Channel MOS FET
50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Renesas Electronics Corporation
|
| RJK5013DPE-00-J3 RJK5013DPE |
14 A, 500 V, 0.465 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
From old datasheet system
|
NEC[NEC]
|
| 2SK2414 2SK2414-Z 2SK2414-Z-T1 2SK2414-Z-E1 2SK241 |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
Low withstand voltage Nch MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| 2SJ541 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK2908-01S 2SK2908-01L |
N-channel MOS-FET
N-channel MOS-FET 9 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
|
| 2SK1399 D14770EJ2V0DS00 2SK1399-L 2SK1399-T2B |
N-channel MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
From old datasheet system
|
NEC[NEC]
|
| UPA1806GR-9JG UPA1806 UPA1806GR-9JG-E1 UPA1806GR-9 |
CONNECTOR ACCESSORY
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
|
