PART |
Description |
Maker |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. Transistors
|
Usha India Ltd.
|
2SA1617 |
Collector-base voltage VCBO -55 V Emitter-base voltage VEBO -5 V
|
TY Semiconductor Co., Ltd
|
OP755D OP755A OP755B OP755C |
NPN Photo transistor with Base-Emitter Resistor
|
OPTEK[OPTEK Technologies]
|
OP750A OP750B OP750C OP750D |
NPN Pho totransistor with Base- Emitter Resistor
|
Optek Technology
|
TIP105 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
|
TIP117 TIP115 TIP116 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
HJ3669 HJ3953 |
Emitter to base voltage:3V 200mA NPN epitaxial planar transistor
|
Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelectroni...
|
Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion) NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion) From old datasheet system NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TIP147T TIP146T |
Monolithic Construction With Built In Base-Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd. TAI-SAW TECHNOLOGY CO.,...
|
MJ10009 MJ10008 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
|
BOCA[Boca Semiconductor Corporation]
|
MJ10023-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|