| PART |
Description |
Maker |
| BSP19AT1 BSP20AT1 |
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| PZT2222AT1 PZT2222AT1_D ON2778 PZT2222AT1D PZT2222 |
SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
| BFG94T/R |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-223 晶体管|晶体管|叩| 12V的五（巴西）总裁| 60mA的一c）|的SOT - 223
|
DB Lectro, Inc.
|
| BFG198T/R |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | SOT-223 晶体管|晶体管|叩| 10V的五（巴西）总裁| 100mA的一（c）|的SOT - 223
|
Pulse Engineering, Inc.
|
| NSI45030AZ |
45 V 30 mA ± 10%, 1.4 W package, Constant Current Regulator, SOT-223
|
ON Semiconductor
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| STN3NE06 4877 |
N-Channel 60V-0.08Ω-3A - SOT-223 STripFETTM Power MOSFET(Ｎ沟道功率ＭＯＳＦＥ
N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET
N - CHANNEL 60V - 0.08W - 3A - SOT-223 STripFET] POWER MOSFET
From old datasheet system
|
意法半导
STMicroelectronics
|
| 20CJQ100 20CJQ100TR |
100V 2A Schottky Common Cathode Diode in a SOT-223 package
|
International Rectifier
|
| IRFL110TR |
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRLL2705TR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRLL3303TR |
30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| AUIRLL014N |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package
|
International Rectifier
|
