| PART |
Description |
Maker |
| 2SB124040ML |
SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| 2SB083040ML |
SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| 2SB065020MTJY |
SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| 2SB166100MA |
LOW IR SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| 2SB267100MA |
LOW IR SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| 2SB065040MLJY |
2SB065040MLJY SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| KDR720S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| KDR368E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| HSMS-0005 HSMS-0006 |
Schottky Barrier Chips for Hybrid Integrated Circuits(混合集成电路应用的肖特基势垒二极
|
Agilent(Hewlett-Packard)
|
