PART |
Description |
Maker |
TC511402AJ-60 TC511402AP-60 TC511402ASJ-60 TC51140 |
1,048,576 x 4 BIT DYNAMIC RAM 1048576 x 4 BIT DYNAMIC RAM Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP
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http:// Toshiba Semiconductor Toshiba Corporation
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HYB314400BJ-50- HYB314400BJ-60 |
1M x 4-Bit Dynamic RAM 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
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SIEMENS AG
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TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No 4,194,304 WORD x BIT DYNAMIC RAM 4194304 WORD x BIT DYNAMIC RAM
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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HYB5118160BSJ-50- HYB3118160BSJ-50 HYB3118160BSJ-6 |
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷 1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
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Siemens Semiconductor Group SIEMENS AG
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HYM361140GS-70 HYM361140GS-60 HYM361140S-70 HYM361 |
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 100万36位动态RAM模块米18位动态随机存储器模块 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 70 ns, SMA72
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SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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MSC23S4721E-8BS18 MSC23S4721E |
4,194,304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): 4194304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): From old datasheet system 4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字2位同步动态RAM模块) 4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字72位同步动态RAM模块)
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OKI electronic componet... OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
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HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered 8M x 72-Bit Dynamic RAM Module (ECC - Module) 8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块 8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24 POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88% 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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SIEMENS A G SIEMENS AG http:// Siemens Semiconductor G...
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HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24 High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO)) 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO)) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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SIEMENS AG http:// Siemens Semiconductor Group
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HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns EDO DRAM 2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM -2M x 8 - Bit Dynamic RAM 2k Refresh 2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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HYB5116400BJ-50-60 Q67100-Q1087 HYB3116400BJ HYB31 |
Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:41; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-41 4米4位动态随机存储器2k 4M×4-Bit Dynamic RAM(4M×4动RAM) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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http:// SIEMENS AG
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HM514100DLS-6 HM514100DLS-7 HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 60ns 4,194,304-word x 1-bit dynamic RAM, 70ns 4,194,304-word x 1-bit dynamic RAM, 80ns
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Hitachi Semiconductor
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