| PART |
Description |
Maker |
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| MRF5P21180 |
2170 MHz, 180 W AVG., 2 x W?CDMA, 28 V Lateral N?Channel RF Power MOSFET
From old datasheet system
|
Motorola
|
| MRF5P21180R6 |
2170 MHz, 38 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF5S21130R3 MRF5S21130SR3 |
2170 MHz, 28 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| BLD6G22LS-50112 BLD6G22L-50112 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors N.V.
|
| MHL21336 |
2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
| SKY77456 |
Front-End Module for LTE / EUTRAN Band IV / X (Tx 1710-1770 MHz), (Rx 2110-2170 MHz)
|
Skyworks Solutions Inc.
|
| PD21120R6 |
120 Watts, 2110-2170 MHz PD21120R6 PUSH/PULL LATERAL MOSFET
120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
|
TRIQUINT SEMICONDUCTOR INC
|
| MRF21120R6 |
2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF21010 |
MRF21010R1, MRF21010LSR1 2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
|
Motorola
|
| PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
