PART |
Description |
Maker |
TC58256AFT |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
TC5832FT |
32 MBIT (4M X 8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
TC58NS512ADC |
512 MBit CMOS NAND EPROM
|
Toshiba
|
TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS 512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
TC58128AFT |
128-MBIT (16M 】 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
PM39F020-70JCE PM39F020-55PCE PM39F020-55JCE PM39F |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory 1兆位/ 2 4兆位5伏,只有闪存的CMOS
|
PMC-Sierra, Inc.
|
HY62KF0840 |
High speed, super low power and 4M bit full CMOS SRAM organized as 512K words by 8bits
|
HYNIX
|
TH58512DC |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
74LVX03M |
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE (OPEN DRAIN) LOGIC GATE|QUAD 2-INPUT NAND|LVX-CMOS|SOP|14PIN|PLASTIC 逻辑门|输入与非| LVX全CMOS |专科| 14PIN |塑料
|
SGS Thomson Microelectronics Bourns, Inc.
|