| PART |
Description |
Maker |
| 4126L-T60-T 4126 4126-T60-T |
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 200 V, NPN, Si, POWER TRANSISTOR, TO-126
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 高频开关晶体管BALLASTERS
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| CPH3223 CPH3123 |
Low-Saturation Voltage Transistors
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS HIGH-CURRENT SWITCHING APPLICATIONS
|
Sanyo Semicon Device
|
| SST4403 2N4403 MMST4403 UMT4403 A5800339 |
PNP Medium Power Transistor (Switching)(PNP中等功率晶体开) 进步党中功率晶体管（开关）（民进党中等功率晶体管（开关）
From old datasheet system
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm Co., Ltd.
ROHM[Rohm]
|
| SMBT2907A MMBT2907A SMBT2907A/MMBT2907A |
Switching Transistors - PNP Silicon Switching Transistor with high current gain
|
INFINEON[Infineon Technologies AG]
|
| FS30ASJ-06F FS30ASJ-06F-T13 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation
|
| H5N5016PL |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H7N0307AB |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation.
|
| H5N2007FN-E H5N2007FN |
Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开
Transistors>Switching/MOSFETs
|
RENESAS[Renesas Electronics Corporation]
|
| H5N3011P-E H5N3011P |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E |
Transistors>Switching/MOSFETs
Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
