| PART |
Description |
Maker |
| KSB1151 |
PNP (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)
|
SAMSUNG[Samsung semiconductor]
|
| BC369 C62702-C748 |
From old datasheet system
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SMBT2907A07 |
PNP Silicon Switching Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SD874A |
Large collector power dissipation PC. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| Q62702-F722 BFP23 BFP26 Q62702-F622 |
PNP Silicon Transistor with high Reve...
From old datasheet system
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2PB709AW 2PB709AQW 2PB709ASW 2PB709ARW |
High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV).
|
TY Semiconductor Co., Ltd
|
| 2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| SMBT2222AE6327HTSA1 |
Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| DP100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| 2SD1691 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
Unisonic Technologies
|
| DP030S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
