PART |
Description |
Maker |
IRF6633APBF IRF6633ATRPBF |
RoHS Compliant DirectFETTM Power MOSFET
|
International Rectifier
|
IRF6610 |
HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM
|
IRF[International Rectifier]
|
M39832-B15WNE1T M39832-B15WNE6T M39832-B12WNE1T M3 |
TVS UNI-DIR 51V 600W DO-15 TVS UNI-DIR 30V 600W DO-15 RECTIFIER, BRIDGE, 600V, 6A, PB-6 TVS BI-DIR 30V 600W DO-15 单芯兆x812KB的x16闪存56千位并行EEPROM存储
|
意法半导 STMicroelectronics N.V.
|
15KP90A 15KPA15C 15KPA12C |
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case 5A Diode TVS Single Bi-Dir 150V 15KW 2-Pin Case P600 Tape and Ammo Diode TVS Single Bi-Dir 120V 15KW 2-Pin Case P600 T/R
|
New Jersey Semiconductors
|
BDA224P BDA218P BDA234P BDA236P |
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:45V; Breakdown Voltage, Vbr:50V; Peak Pulse Power PPK @ 10x1000uS:500W; Package DIODE TVS 33V 500W UNI-DIR DIODE TVS 6.0V 500W BI-DIR TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:6.5V; Breakdown Voltage, Vbr:7.22V; Peak Pulse Power PPK @ 10x1000uS:500W; Package/Case:DO-204AC; Leaded Process Compatible:Yes 500毫升塑料BECHERGLAS
|
Panasonic, Corp.
|
AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET HEXFET庐 Power MOSFET HEXFET? Power MOSFET 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance
|
International Rectifier List of Unclassifed Man...
|
ZFDC-10-1-75 |
DIR COUP / BNC
|
Mini-Circuits
|
AKD4113 |
192KHZ 24BIT DIR WITH 6:1 SELECTOR
|
Asahi Kasei Microsystems
|
1N5651B 1N5635B |
Diode TVS Single Uni-Dir 45.4V 1.5KW 2-Pin DO-13 Bulk Diode TVS Single Uni-Dir 9.72V 1.5KW 2-Pin DO-13 Bulk
|
New Jersey Semiconductors
|
AK468310 |
Asynchronous Multi-Channel Audio CODEC with DIR/T
|
Asahi Kasei Microsystems
|
AK4584VQ |
24Bit 96kHz Audio CODEC with DIT/DIR
|
Asahi Kasei Microsystems Co.,Ltd
|