| PART |
Description |
Maker |
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| MRF21060R3 MRF21060SR3 MRF21060 |
2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
Motorola, Inc
|
| MRF5S9070NR1 |
880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF5S19150R3 MRF5S19150 MRF5S19150SR3 |
MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MAPLST1900-030CF |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V
|
Tyco Electronics
|
| APTGT75DA170T1G |
Boost chopper Trench Field Stop IGBT? Power Module
Boost chopper Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT50A60T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT150DA60T1G |
Boost chopper Trench Field Stop IGBT? Power Module
Boost chopper Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT150A60T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT20A60T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
