PART |
Description |
Maker |
IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
MRF19060 MRF19060R3 MRF19060SR3 |
RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
MRF21060R3 MRF21060SR3 MRF21060 |
2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
|
Freescale (Motorola) Motorola, Inc
|
MRF21090 MRF21090R3 MRF21090SR3 |
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
|
Freescale (Motorola) MOTOROLA[Motorola Inc] Motorola, Inc
|
MRF9045LR1 MRF9045LSR1 |
945 MHz, 45 W, 28 V Lateral N–Channel Broadband RF Power MOSFET RF POWER FIELD EFFECT TRANSISTORS
|
Freescale (Motorola) FREESCALE[Freescale Semiconductor, Inc]
|
MRF281ZR1 MRF281 MRF281SR1 |
MRF281SR1, MRF281ZR1 2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3 |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
|
IRFD112 IRFD113 |
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
GE Solid State
|
MRF374A |
MRF374A 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc Motorola Inc
|
2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER
|
TOSHIBA
|
APTGT50A60T1G |
Phase leg Trench Field Stop IGBT? Power Module Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|